Free Boundaries in Semiconductor Devices
نویسنده
چکیده
|The rst analyses of semiconductor devices in the 1940s and 50s already considered a splitting of devices into regions of zero space charge and depletion regions. Here it is shown that these simplied models appear as singular limits of the drift-diiusion model for charge transport in semiconductors. The limiting problem for the potential is similar to the so called space charge problem. For pn-diodes under certain biasing conditions, an existence result is a by-product of the present analysis.
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